FR In order to carry out identification of barrel-shaped packages C1, C2 bearing an identification reference mark on their lateral surface of revolution, the packages are placed successively vertically astride two juxtaposed transporters 24a, 24b. By actuating these two transporters in the same direction, the package is brought to bear against stops 32a, 32b. The two transporters are then actuated in the reverse direction, which has the effect of turning the barrel on itself. The index mark carried by the barrel is then scanned by a fixed read head 30. Next the stops 32a, 32b are retracted and the transporters 24a, 24b are again actuated in the same direction to remove the barrel thus identified. <IMAGE>

美国

PURPOSE:To reduce the area of a parasitic region and to achieve high performance and high density in a MOSFET, in a semiconductor device having a MIS structure, by providing a polycrystalline silicon layer, which is formed on a part from a source region to an element isolating region, providing the source region and a drain region, which are formed in a self-aligning mode, and providing a gate electrode, which is formed along an insulating film. CONSTITUTION:A channel region is determined with an N<+> type polycrystalline silicon layer 5 by a self-aligning mode. A gate electrode 8, which is selected from among a polycrystalline silicon layer, high melting point metal, metal and metal silicide, is formed on the channel region through a gate film 6. Source/drain regions 3 and 4 are formed in a self-aligning mode by the diffusion of impurities from the N<+> type polycrystalline silicon layer 5. Lead-out of the source/drain electrodes is performed with said N<+> type polycrystalline silicon layer 5. Therefore, the size of an element can be reduced without restriction on lithography technology. As a result, parasitic element such as a drain- substrate capacitance are decreased to a large extent. The high performance and the high density of the element can be achieved.