[Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang] TW Hsin-Chu Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

[Shang-Yuan Yu, Hsiao Chien-Wen, Jui-Chuan Chang, Shao-Fu Hsu, Shao-Yen Ku, Wen-Chang Tsai, Yuan-Chih Chiang] TW Hsin-Chu Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

[Shang-Yuan YU, Hsiao CHIEN-WEN, Jui-Chuan CHANG, Shao-Fu HSU, Shao-Yen KU, Wen-Chang TSAI, Yuan-Chih CHIANG] TW Hsin-Chu Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

[Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang] TW Hsin-Chu Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

[CHANG FENG-TANG, HWANG CHIEN-LIANG, CHANG SHAO-CHIEN] TW The present invention discloses a repurification device for nitrogen oxides in exhaust gas of an incinerator. The exhaust gas is expelled from the incinerator. The repurification device includes shunt unit and a low-temperature catalyst equipment. The shunt unit is used to shunt the exhaust gas of the incinerator into a main flow and a repurification branch. At least a part of the repurification branch is introduced into the low-temperature catalyst device, which has denitrification (De-NOx) catalyst for reducing at least a part of the nitrogen monoxide contained in the repurification branch to nitrogen. The present invention also discloses a green house gas purification system, which includes the incinerator and the repurification device and is adapted to remove NOx and carbon dioxide. Excellent carbon reduction can be achieved.

[CHANG FENG-TANG, HWANG CHIEN-LIANG, CHANG SHAO-CHIEN] TW The present invention discloses a repurification device for nitrogen oxides in exhaust gas of an incinerator. The exhaust gas is expelled from the incinerator. The repurification device includes shunt unit and a low-temperature catalyst equipment. The shunt unit is used to shunt the exhaust gas of the incinerator into a main flow and a repurification branch. At least a part of the repurification branch is introduced into the low-temperature catalyst device, which has denitrification (De-NOx) catalyst for reducing at least a part of the nitrogen monoxide contained in the repurification branch to nitrogen. The present invention also discloses a green house gas purification system, which includes the incinerator and the repurification device and is adapted to remove NOx and carbon dioxide. Excellent carbon reduction can be achieved.

[Chien-Wen Chen, Yi-Shao Lai, Hsiao-Chuan Chang, Tsung-Yueh Tsai, Pao-Huei Chang Chien, Ping-Cheng Hu, Hsu-Yang Lee] TW Kaohsiung A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, multiple leads, a chip, a package body, and a protective layer. The die pad includes an upper sloped portion, a lower sloped portion, and a peripheral edge region defining a cavity with a cavity bottom. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body. The protective layer substantially covers the lower sloped portion and the lower surface of at least one lead.

[CHANG FENG-TANG, HWANG CHIEN-LIANG, CHANG SHAO-CHIEN] TW

[CHANG FENG-TANG, HWANG CHIEN-LIANG, CHANG SHAO-CHIEN] TW

[CHANG FENG-TANG, HUANG CHAO-LIN, LIN SHIH-WAN, CHANG SHAO-CHIEN, NIEN KAI-CHUN, HWANG CHIEN-LIANG] TW