[LIU, Song, TIAN, Lixin, WEN, Xian-Huan, ZHAO, Chunming, YANG, Qinghong, ZHANG, Peng, ZHOU, Dengen, LI, Bo, LAN, Lichuan, GE, Lizhen, LIAO, Xinwu, ZHANG, Fengli, WEI, Michael S.] US,San Ramon, CA 94583,6001 Bollinger Canyon Road;CN,Beijing 100010,Box 4705 No. 25, Chao Yangmen North Street Dongcheng;

[GE, Zengwei, ZHU, Yong, WU, Guoqing, YIN, Xueji, TANG, Linyao, ZHAO, Hanbin, GU, Lizhen] No. 215, Chengbei Road Jiading District, Shanghai 201800, CN

[LIU, Song, TIAN, Lixin, WEN, Xian-Huan, ZHAO, Chunming, YANG, Qinghong, ZHANG, Peng, ZHOU, Dengen, LI, Bo, LAN, Lichuan, GE, Lizhen, LIAO, Xinwu, ZHANG, Fengli, WEI, Michael S.] 6001 Bollinger Canyon Road San Ramon, California 94583;No. 25 Chaoyangmenbei Dajie Dongcheng District Beijing, 100010;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;4277 Diavila Avenue Pleasanton, California 94588;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;4902 Briar Court Sugarland, Texas 77479;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;QHD32-6 Operating Company CNOOC, P.O. Box 609 Tanggu;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;Institute of Exploration & Development Research CCLT, CNOOC, P.O. Box 609 Tanggu;QHD32-6 Operating Company CNOOC, P.O. Box 609 Tanggu;2007 Valleria Court Sugarland, Texas 77479 Computer-implemented systems and methods are provided for optimizing hydrocarbon recovery from subsurface formations, including subsurface formations having bottom water or edgewater. A system and method can be configured to receive data indicative of by-pass oil areas in the subsurface formation from reservoir simulation, identify flow barriers in the subsurface formation based on the by-pass oil areas identified by the reservoir simulation, and predict the lateral extension of the identified flow barriers in the subsurface formation. Infill horizontal wells can be placed at areas of the subsurface formation relative to the flow barriers such that production from a horizontal well in the subsurface formation optimizes hydrocarbon recovery.

[Zengwei Ge, Yong Zhu, Guoging Wu, Xueji Yin, Linyao Tang, Hanbin Zhao, Lizhen Gu] CN Shanghai A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10−13 g/g.

[LIU SONG, TIAN LIXIN, WEN XIAN-HUAN, ZHAO CHUNMING, YANG QINGHONG, ZHANG PENG, ZHOU DENGEN, LI BO, LAN LICHUAN, GE LIZHEN, LIAO XINWU, ZHANG FENGLI, WEI MICHAEL S] US;CN

[Song Liu, Lixin Tian, Xian-Huan Wen, Chunming Zhao, Qinghong Yang, Peng Zhang, Dengen Zhou, Bo Li, Lichuan Lan, Lizhen Ge, Xinwu Liao, Fengli Zhang, Michael Sheng-Wei Wei] US CA San Ramon Computer-implemented systems and methods are provided for optimizing hydrocarbon recovery from subsurface formations, including subsurface formations having bottom water or edgewater. A system and method can be configured to receive data indicative of by-pass oil areas in the subsurface formation from reservoir simulation, identify flow barriers in the subsurface formation based on the by-pass oil areas identified by the reservoir simulation, and predict the lateral extension of the identified flow barriers in the subsurface formation. Infill horizontal wells can be placed at areas of the subsurface formation relative to the flow barriers such that production from a horizontal well in the subsurface formation optimizes hydrocarbon recovery.

[LUO, Lizhen 罗丽珍, PENG, Wenbo 彭文博, XIAO, Ping 肖平, ZHAO, Dongming 赵东明, LI, Xiaolei 李晓磊, GAO, Hu 高虎, SHI, Yue 施悦, GE, Heng 葛恒] Laboratory A, Huaneng Talent Innovation and Venture Base, Future Science Park, Beiqijia 中国北京市昌平区北七家未来科技城华能人才创新创业基地实验楼A楼, Beijing 102209Changping District, Beijing 102209;Jiaoshi Villager Member, Yousuo Town, Eryan County 中国云南省大理白族自治州洱源县右所镇焦石村民委员会, Yunnan 671200Dali, Yunnan 671200 Disclosed in the present invention are a heterojunction back contact cell and a manufacturing method therefor. The heterojunction back contact cell comprises a substrate, a first intrinsic amorphous silicon passivation layer, an anti-reflection layer, a second intrinsic amorphous silicon passivation layer, a doping layer, a transparent conductive layer, and first intrinsic amorphous silicon passivation isolation layers. The first intrinsic amorphous silicon passivation layer and the anti-reflection layer are sequentially deposited on a light-facing surface of the substrate; the second intrinsic amorphous silicon passivation layer and the doping layer are sequentially deposited on the opposite surface of the substrate; the doping layer comprises a plurality of P regions and N regions which are alternately arranged; the transparent conductive layer is deposited on the P regions and the N regions; any adjacent P region and N region are separated to form a first isolation groove; the first intrinsic amorphous silicon passivation isolation layers are in one-to-one correspondence to the first isolation grooves; and the corresponding first isolation grooves are filled with the first intrinsic amorphous silicon passivation isolation layers. Disclosed in the present invention are a heterojunction back contact cell and a manufacturing method therefor. The heterojunction back contact cell comprises a substrate, a first intrinsic amorphous silicon passivation layer, an anti-reflection layer, a second intrinsic amorphous silicon passivation layer, a doping layer, a transparent conductive layer, and first intrinsic amorphous silicon passivation isolation layers. The first intrinsic amorphous silicon passivation layer and the anti-reflection layer are sequentially deposited on a light-facing surface of the substrate; the second intrinsic amorphous silicon passivation layer and the doping layer are sequentially deposited on the opposite surface of the substrate; the doping layer comprises a plurality of P regions and N regions which are alternately arranged; the transparent conductive layer is deposited on the P regions and the N regions; any adjacent P region and N region are separated to form a first isolation groove; the first intrinsic amorphous silicon passivation isolation layers are in one-to-one correspondence to the first isolation grooves; and the corresponding first isolation grooves are filled with the first intrinsic amorphous silicon passivation isolation layers.

[GE, Zengwei, ZHU, Yong, WU, Guoqing, YIN, Xueji, TANG, Linyao, ZHAO, Hanbin, GU, Lizhen] No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 1295, Dingxi Road Shanghai 200050;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800;No. 215, Chengbei Road, Jiading District Shanghai 201800 A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10-13 g/g.

[GE, Zengwei, ZHU, Yong, WU, Guoqing, YIN, Xueji, TANG, Linyao, ZHAO, Hanbin, GU, Lizhen] No. 215, Chengbei Road Jiading District, Shanghai 201800, CN A high-purity tellurium dioxide (TeO＜sub＞2＜/sub＞) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO＜sub＞2＜/sub＞ single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10＜sup＞-13＜/sup＞ g/g＜sub＞.＜/sub＞＜img id="iaf01" file="imgaf001.tif" wi="149" he="62" img-content="drawing" img-format="tif" /＞

[LI BO, ZHAO CHUNMING, ZHOU DENGEN, ZHANG FENGLI, LAN LICHUAN, TIAN LIXIN, GE LIZHEN, WEI MICHAEL S, ZHANG PENG, YANG QINGHONG, LIU SONG, WEN XIAN-HUAN, LIAO XINWU] US;CN Computer-implemented systems and methods are provided for optimizing hydrocarbon recovery from subsurface formations, including subsurface formations having bottom water or edgewater. A system and method can be configured to receive data indicative of by-pass oil areas in the subsurface formation from reservoir simulation, identify flow barriers in the subsurface formation based on the by-pass oil areas identified by the reservoir simulation, and predict the lateral extension of the identified flow barriers in the subsurface formation. Infill horizontal wells can be placed at areas of the subsurface formation relative to the flow barriers such that production from a horizontal well in the subsurface formation optimizes hydrocarbon recovery.