[NAGATOMO, Noriaki 長友　憲昭, NAGATOMO, Noriaki 長友　憲昭, MATSUMOTO, Fumio 松本　文夫, NAGATOMO, Noriaki 長友　憲昭, MATSUMOTO, Fumio 松本　文夫, INABA, Hitoshi 稲葉　均, NAGATOMO, Noriaki 長友　憲昭, MATSUMOTO, Fumio 松本　文夫, INABA, Hitoshi 稲葉　均, TAKESHIMA, Kazuta 竹島　一太, NAGATOMO, Noriaki 長友　憲昭, MATSUMOTO, Fumio 松本　文夫, INABA, Hitoshi 稲葉　均, TAKESHIMA, Kazuta 竹島　一太, YAMAGUCHI, Kunio 山口　邦生, NAGATOMO, Noriaki 長友　憲昭, MATSUMOTO, Fumio 松本　文夫, INABA, Hitoshi 稲葉　均, TAKESHIMA, Kazuta 竹島　一太, YAMAGUCHI, Kunio 山口　邦生, TANAKA, Hiroshi 田中　寛] 3-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 〒1008117 東京都千代田区大手町１丁目３番２号 Tokyo1008117 A temperature sensor of the present invention is provided with a pair of lead frames 2, a sensor section 3 connected to the lead frames, and an insulating holding section 4 that holds the lead frames. The sensor section is provided with: an insulating film 5 having the lead frames bonded on the upper surface; a thin film thermistor section 6 formed on the insulating film; a pair of interdigital electrodes 7 formed on the thin film thermistor section; a pair of pattern electrodes formed on the upper surface of the insulating film; and a pair of protection tapes 9A, 9B, which are bonded to each other by vertically sandwiching therebetween the pair of lead frames and the sensor section. Both side sections 5a of the insulating film are disposed close to and on the inner sides of outer corner sections 2b that are disposed on the bonding surface sides of the pair of lead frames, and both side sections 9a of the protection tapes are bent on the outer side of both the side sections of the insulating film, said side sections 9a being bent toward the upper surface side. A temperature sensor of the present invention is provided with a pair of lead frames 2, a sensor section 3 connected to the lead frames, and an insulating holding section 4 that holds the lead frames. The sensor section is provided with: an insulating film 5 having the lead frames bonded on the upper surface; a thin film thermistor section 6 formed on the insulating film; a pair of interdigital electrodes 7 formed on the thin film thermistor section; a pair of pattern electrodes formed on the upper surface of the insulating film; and a pair of protection tapes 9A, 9B, which are bonded to each other by vertically sandwiching therebetween the pair of lead frames and the sensor section. Both side sections 5a of the insulating film are disposed close to and on the inner sides of outer corner sections 2b that are disposed on the bonding surface sides of the pair of lead frames, and both side sections 9a of the protection tapes are bent on the outer side of both the side sections of the insulating film, said side sections 9a being bent toward the upper surfa

[TAKAYA TAKAO, TAKAO TAKAYA, SHIRAI FUMIYUKI, FUMIYUKI SHIRAI, NAKAMURA HITOSHI, HITOSHI NAKAMURA, INABA YASUNOBU, YASUNOBU INABA]

[INABA, Minoru, TASAKA, Akimasa, SAITO, Morihiro, TAKAGI, Mikihiro, TAKEBAYASHI, Hitoshi, SYODAI, Yoshio] 601, Genbu-cho Karasuma-Higashi-iru Imadegawa-dori Kamigyo-ku, Kyoto-shi, Kyoto 602-8580, JP A problem to be solved is to enhance the charge and discharge characteristics and rate characteristics of a B-type titanium oxide (TiO＜sub＞2＜/sub＞ (B)) powder by a simple treatment and to provide a B-type titanium oxide powder that can be suitably used as a negative electrode material for a lithium ion battery. A B-type titanium oxide powder is allowed to undergo a reaction under a fluorine-containing gas atmosphere at 0°C to 200°C for 1 minute to 10 days to obtain a surface-fluorinated B-type titanium oxide powder. It is preferred that the fluorination treatment is performed at 0.01 atm to 2 atm. It is preferred that a gas containing a fluorine compound selected from a fluorine (F＜sub＞2＜/sub＞) gas, a nitrogen trifluoride (NF＜sub＞3＜/sub＞) gas, a perfluorotrimethylamine (N(CF＜sub＞3＜/sub＞)＜sub＞3＜/sub＞) gas, a chlorine trifluoride (ClF＜sub＞3＜/sub＞) gas and the like is used as the fluorine-containing gas.

[YOSHIKAWA, Minoru, SAKAMOTO, Hitoshi, CHIBA, Masaki, INABA, Kenichi, MATSUNAGA, Arihiro] 7-1, Shiba 5-chome Minato-ku, Tokyo 108-8001, JP In a piping structure of a cooling device using an ebullient cooling system, the cooling performance of the cooling device is degraded if the pipe is provided with flexibility, therefore, a piping structure of a cooling device according to an exemplary aspect of the invention includes a first tubular part with a hollow portion through which a refrigerant used in the cooling device flows; wherein the first tubular part is made of metal materials; and the surface roughness of the inner surface of the first tubular part is less than or equal to the size of a condensation nucleus for the refrigerant.＜img id="iaf01" file="imgaf001.tif" wi="130" he="87" img-content="drawing" img-format="tif" /＞

[INABA, Kenichi, YOSHIKAWA, Minoru, SAKAMOTO, Hitoshi, CHIBA, Masaki, MATSUNAGA, Arihiro] 7-1 Shiba 5-chome Minato-ku, Tokyo 108-8001, JP

[MATSUNAGA, Arihiro, YOSHIKAWA, Minoru, SAKAMOTO, Hitoshi, SHOUJIGUCHI, Akira, CHIBA, Masaki, INABA, Kenichi] 7-1, Shiba 5-chome Minato-ku, Tokyo 108-8001, JP In order to maintain a high cooling capability even in a case where a heating element has a lower calorific value, a boiling section of a heat receiving section in a phase change cooling apparatus includes a comb-shaped structure and a porous layer provided on a bottom portion of the comb-shaped structure between fins of the comb-shaped structure. With such a boiling section, a liquid film of a liquid phase refrigerant is forcedly made thinner. Thus, the liquid phase refrigerant is changed in phase into a gaseous phase refrigerant even in a case of a small difference between the temperature of the gaseous phase refrigerant and the temperature of the heat receiving surface.＜img id="iaf01" file="imgaf001.tif" wi="118" he="71" img-content="drawing" img-format="tif" /＞

[INABA, Hitoshi, NAGATOMO, Noriaki, TAKESHIMA, Kazuta] 3-2, Otemachi 1-chome, Chiyoda-ku Tokyo 100-8117, JP Provided is a battery with a temperature control function capable of accurately measuring the temperature of a battery to control its heating. The battery with a temperature control function includes a battery body, and a film heater with a temperature sensor arranged so as to cover at least a part of the surface of the battery body. The film heater with a temperature sensor includes an insulating film, a temperature sensor portion formed on the insulating film, and a heater wire formed thereon through the insulating layer. The heater wire is patterned on the insulating layer. The temperature sensor portion has the thin film thermistor portion made of a thermistor material patterned directly under the heating region of the heater wire and on the insulating film, and a pair of pattern electrodes formed on at least the thin film thermistor portion.＜img id="iaf01" file="imgaf001.tif" wi="75" he="105" img-content="drawing" img-format="tif" /＞

[OHMI, Tadahiro, 1-17-301, Komegabukuro 2-chome, INABA, Hitoshi, 24-8, Nakamachi 3-chome] 2-8, Kandasurugadai 4-chome, Chiyoda-ku, Tokyo 101, JP An apparatus which can neutralize charged bodies such as processed substrates for semiconductor devices and for flat display, free from electromagnetic noise, impurity contamination, and residual potentials. To process in a prescribed way a wafer (5) to be processed, the wafer (5) is, for example, moved from a pretreatment chamber (2) to a low pressure reaction chamber (3). In this case, a gas, which does not react on the wafer, such as nitrogen and argon, is introduced into the pretreatment chamber (2), and is kept under a predetermined pressure by a vacuum pump (15). Then, ultraviolet rays are projected in the pretreatment chamber (2) from an ultraviolet rays lamp (11) constituting a means for generating neutralization charges, and positive and negative floating charged particles (electrons and positive ions) are generated by exciting the atmosphere in the chamber (2). Since the charges are removed by projecting the ultraviolet rays from the outsides of a case (1) and the case (2) and moreover in a non-contact way, no electromagnetic noise is generated and the residual potentials are vanished too.＜!-- EPO ＜DP n="2"＞ --＞＜img id="iaf01" file="imgaf001.tif" wi="110" he="109" img-content="drawing" img-format="tif" inline="no" /＞

[Tanishima, Masami, Inaba, Hitoshi, Imai, Katsumasa, Takayanagi, Yoshihiro, Echigo, Masahiro] 31-4, Nishiochiai 1-chome, Shinjuku-ku Tokyo, JP

[Otani, Hitoshi, Tanahashi, Atsushi, Inaba, Hiroshi, Ishida, Takeshi, Kaneko, Junki] 75-1, Hasunuma-cho Itabashi-ku, Tokyo-to, JP