[ZOU, Haisheng 邹海声, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, YU, Xuebin 余学斌, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, YU, Xuebin 余学斌, TANG, Weizhao 唐伟钊, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, YU, Xuebin 余学斌, TANG, Weizhao 唐伟钊, YANG, Lin 杨林, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, YU, Xuebin 余学斌, TANG, Weizhao 唐伟钊, YANG, Lin 杨林, SHEN, Fei 沈飞, ZOU, Haisheng 邹海声, LI, Zhicheng 李枝成, CHEN, Feng 陈峰, YU, Xuebin 余学斌, TANG, Weizhao 唐伟钊, YANG, Lin 杨林, SHEN, Fei 沈飞, NA, Qinglin 那庆林] 7th Floor 中国广东省深圳市坪山新区翠景路35号七楼, Guangdong 518000#35 Cuijing Road, Pingshan New DistrictShenzhen, Guangdong 518000 An electronic cigarette atomizer oiling and labeling device, comprising a rack (1). A table top of the rack (1) is provided with an obtaining station, an oiling station, an assembling station, a labeling station and a silicon rubber case pressing station. The electronic cigarette atomizer oiling and labeling device further comprises a feeding mechanism (2), an oiling mechanism (4), an oil ring packaging mechanism (5), an end cover installation mechanism (6), a resistance detection mechanism (7), a first transfer mechanism (8), a labeling mechanism (9), a second transfer mechanism (10) and a silicon rubber case pressing mechanism (11). An electronic cigarette atomizer circularly flows among the feeding mechanism (2), the oiling mechanism (4), the oil ring packaging mechanism (5), the end cover installation mechanism (6), the resistance detection mechanism (7), the first transfer mechanism (8), the labeling mechanism (9), the second transfer mechanism (10) and the silicon rubber case pressing mechanism (11) in sequence to achieve machining. By means of the electronic cigarette atomizer oiling and labeling device, various working procedures of electronic cigarette atomizer production are integrated, mechanical and automatic electronic cigarette atomizer production is achieved, a large amount of labor does not need to be consumed, and the labor intensity of workers in the electronic cigarette industry is lowered.

[DUBE, Abhishek, DUBE, Abhishek, LI, Xuebin, DUBE, Abhishek, LI, Xuebin, HUANG, Yi-Chiau, DUBE, Abhishek, LI, Xuebin, HUANG, Yi-Chiau, CHUNG, Hua, DUBE, Abhishek, LI, Xuebin, HUANG, Yi-Chiau, CHUNG, Hua, CHU, Schubert S.] 3050 Bowers AvenueSanta Clara, California 95054 Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1x1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater. Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1x1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

[XIE, Sujuan, XIE, Sujuan, XU, Longya, XIE, Sujuan, XU, Longya, YANG, Zhiqiang, XIE, Sujuan, XU, Longya, YANG, Zhiqiang, LIU, Xuebin, XIE, Sujuan, XU, Longya, YANG, Zhiqiang, LIU, Xuebin, LI, Xiujie, XIE, Sujuan, XU, Longya, YANG, Zhiqiang, LIU, Xuebin, LI, Xiujie, LIU, Shenglin, XIE, Sujuan, XU, Longya, YANG, Zhiqiang, LIU, Xuebin, LI, Xiujie, LIU, Shenglin, ZHU, Xiangxue] Room 2101, Youyou International PlazaNo. 76 Pujian Road, Pudong New DistrictShanghai 200127;457 Zhongshan RoadDalian, Liaoning 116023 This application consists of a method for the synthesis of a type of FER/MOR composite molecular sieve. That method consisting of mixing FER seed crystals, MOR seed crystals, a silicon source, water and an acid or alkali, thus yielding a reaction mixture; by adjusting the proportions of the seed crystals added, the silicon-aluminium proportion, acidity/alkalinity and other reaction conditions, it is possible to obtain a dual phase composite molecular sieve within which the proportions of the crystal phases may be adjusted. In the synthesis process to which the method of this application relates, there is no need to add any organic template, thus reducing the cost of the reaction, in addition to reducing likely environmental pollution, thus having major potential applications.

[DUBE, Abhishek, DUBE, Abhishek, CHUNG, Hua, DUBE, Abhishek, CHUNG, Hua, WANG, Jenn-Yue, DUBE, Abhishek, CHUNG, Hua, WANG, Jenn-Yue, LI, Xuebin, DUBE, Abhishek, CHUNG, Hua, WANG, Jenn-Yue, LI, Xuebin, HUANG, Yi-Chiau, DUBE, Abhishek, CHUNG, Hua, WANG, Jenn-Yue, LI, Xuebin, HUANG, Yi-Chiau, CHU, Schubert S.] 3050 Bowers AvenueSanta Clara, California 95054 Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375°C to about 450°C and a chamber pressure of about 5 Torr to about 20 Torr.

[KIM, Yihwan, KIM, Yihwan, LI, Xuebin, KIM, Yihwan, LI, Xuebin, DUBE, Abhishek] 3050 Bowers AvenueSanta Clara, California 95054 Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

[LI, Xuebin 李雪斌, LI, Xuebin 李雪斌, ZHANG, Chuang 张创] Huawei Administration Building 中国广东省深圳市龙岗区坂田华为总部办公楼, Guangdong 518129Bantian, Longgang DistrictShenzhen, Guangdong 518129 A data compression and storage method and device, and distributed file system, the distributed file system comprising a client node, a namenode (NN) and a datanode (DN), and the realization of the method comprising: after receiving a file creation request transmitted by the client node, the NN determines a data compression node set comprising at least two data compression nodes, the data compression node being a DN having a data compression processing resource; the NN transmits the data compression node set to the client node; after receiving a node acquisition request transmitted by the data compression node in the data compression node set, the NN determines a data storage node being a DN having a data storage resource; and the NN transmits the information of the determined data storage node to the data compression node corresponding to the node acquisition request, thus increasing an efficiency and a speed of data compression and storage.

[Xiaodi TIAN, Guokai JIANG, Bowei ZOU, Feiyan WU, Xin LI, Xuebin SHAO, Fujian HE, Chun LI, Rupeng DOU, Jiaxu FENG, Zhiqiang YANG, Shasha TANG, Xiucheng LI, Xiaolong ZHAO, Dandan WU, Jinna FAN, Quan WEN, Ji HUANG, Jiaoyang LIU, Yu WANG, Mengdan WANG] CN Tianjin This application relates to the technical field of connectivity communication, and provides an apparatus and method for testing a connected vehicle's communication distance. The testing apparatus includes a support member, and a first antenna is provided on the support member and connected to a signal transceiver. The signal transceiver is configured to send signals to a tested vehicle or receive signals sent by the tested vehicle. An output terminal of the signal transceiver is connected to an upper computer. Data analysis software is installed on the upper computer, and used for recording a test distance and a number of data packets and calculating a packet loss rate, such that a maximum communication distance is obtained according to the test distance and the corresponding packet loss rate.

[WANG HAIZHOU, JIA YUNHAI, ZHAO LEI, CHEN XUEBIN, WANG HUI, HU MAN, FENG GUANG, LI DONGLING, WANG PENG, LI XIAOJIA] CN

[JHA, Satish C., FOUAD, Yaser M., LI, Qian, LI, Guangjie, KIM, Joonbeom, SHARMA BANJADE, Vesh Raj, GHOZLAN, Hassan, YING, Dawei, LU, Lu, YANG, Xuebin, ARDITTI ILITZKY, David, NOH, Song, WU, Xiaoyun May, WU, Geng] 2200 Mission College BoulevardSanta Clara, California 95054 Techniques for implementing a tSL-HL (5G (Fifth Generation) NR (New Radio) Things (t) SL (Sidelink) HL (higher layer)) for communications involving a tUE (5G NR Things User Equipment) are discussed. One example involves assigning a distinct sequence number to each of one or more user plane (UP) packets from an upper layer; buffering the one or more UP packets to a UP transmission buffer; determining a physical resource assignment (PRA) and an allocated size for a UP tSL-HL protocol data unit (PDU); generating the UP tSL-HL PDU based at least in part on the one or more UP packets buffered to the UP transmission buffer, the PRA, and the allocated size; adding a packet header to the tSL-HL PDU; and providing the tSL-HL PDU to a physical layer based on the PRA.

[Haizhou WANG, Yunhai JIA, Lei ZHAO, Xuebin CHEN, Hui WANG, Man HU, Guang FENG, Dongling LI, Peng WANG, Xiaojia LI] CN Beijing The invention relates to a method of high-throughput hot isostatic pressing micro-synthesis for the combinatorial materials and a sleeve mould thereof. The sleeve mould (2) comprises a honeycomb-array-sleeve (3) and an upper cover (4), wherein a plurality of single cells (6) are tightly arranged inside the honeycomb-array-sleeve (3), an exhaust tube (5) is arranged on the upper cover (4), after the single cells (6) are filled with powder materials, the upper cover (4) is sealed welding on the honeycomb-array-sleeve (3), and the honeycomb-array-sleeve (3) and the upper cover (4) are both integrally produced by additive manufacturing. According to the method and the sleeve mould, the powder metallurgy hot isostatic pressing process is utilized to prepare small-size bulk combinatorial materials with multiple discrete components rapidly at one time. This method has the characteristics of high sintering speed, high compaction density, good thermal diffusivity, short production cycle and low material consumption. This invention successfully overcomes drawbacks of current material preparation, such as unitary combination of components, huge material consumption and high cost.