[LIN, Jen Cheng, LIN, Jen Cheng, LIN, Chun-Chieh, LIN, Jen Cheng, LIN, Chun-Chieh, LEE, Hsu-Tung, LIN, Jen Cheng, LIN, Chun-Chieh, LEE, Hsu-Tung, FAN, Yu-Ming, LIN, Jen Cheng, LIN, Chun-Chieh, LEE, Hsu-Tung, FAN, Yu-Ming, TSAI, Jui-Chi, LIN, Jen Cheng, LIN, Chun-Chieh, LEE, Hsu-Tung, FAN, Yu-Ming, TSAI, Jui-Chi, DU, Ying-Chi] 9F.-3, No.77, Sinpu 6th St., Taoyuan CityTaoyuan County 33044 The present invention relates to a novel type of PPARγ modulator having a pyrimido [5, 4-d]pyrimidine main structure. The PPARγ modulator can enhance the expression and nuclear translocation of PPARγ in cells. The present invention also relates to a pharmaceutical composition comprising the PPARγ modulator of the invention encapsulated in a pharmaceutically acceptable cell-penetrating drug delivery system so that it can be directly delivered into cells. The present invention thus provides a method of preventing or treating PPARγ-related disorders or conditions comprising administering to a subject in need thereof a therapeutically effective amount of the PPARγ modulator of the invention or the pharmaceutical composition of the invention.

[CHENG TSUNG-SHENG, LIN YUNG-CHANG, LIN WEI-JI, JUWU YU-QIAN, LIN HSI-HSIANG, CHOU CHIH-LIN, CHAO CHUN-CHIEH] TW;TW The present invention relates to a medicine delivery machine structure. Primarily, several medicine packages are stored in a medicine box, and then the medicine box is assembled into a body of the medicine delivery machine, and a front section of the series medicine packages is sent into the body. In this way, when in use, a scanning identification unit set in the body will scan and read the electronic label information on the medicine package to set the time for a patient\'s to take medicine. When it is time to take the medicine, a warning sound will be issued to remind the patient to take the medicine, and the identity of the person who should take the medicine will be identified. When the person has the authority to take the medicine after comparison, a medicine package delivery unit built in the body will push the medicine packages outside the body. This identification mechanism can prevent patients from taking the wrong medicine, and the medication reminder mechanism can solve the problem of patients forgetting to take medicine. In addition, when a patient does not take medicine at the time which he/she should take the medication, the patient\'s contact person will be remaindered to take back the medicine packages to avoid duplication of taking the medicine, so as to improve the medication mechanism and achieve the effect of effectively controlling the condition of patients with chronic diseases.

[CHENG TSUNG SHENG, LIN YUNG CHANG, LIN WEI JI, JU WU YU QIAN, LIN HSI HSIANG, CHOU CHIH LIN, CHAO CHUN CHIEH] TW;TW

[LIN CHUN-CHIEH, CHAO LAN-LIN, LIN CHIA-HUI, YANG FU-LIANG] TW The present invention is related to a crown-type capacitor and its manufacturing method. The invention includes the followings: a semiconductor substrate; a plurality of crow-type lower electrodes arranged on the semiconductor substrate; plural insulating support portions which are connected among the lower electrodes and are separated from each other; a capacitive dielectric-layer, which conformably covers the surface exposed from the lower electrode structure; and one top electrode layer formed on the dielectric layer.

[LIN YU-MING, LIAO WEN-NENG, HSIEH CHENG-WEN, LIN KUANG-HUA, CHEN WEI-CHIN, CHEN KUAN-LIN, WANG CHUN-CHIEH] TW

[LIN YU CHUN, WANG JIUN JIE, WANG CHUN CHIEH, LIN YI PING, LIN GI GIN] TW

[LIN YU-MING, LIAO WEN-NENG, HSIEH CHENG-WEN, LIN KUANG-HUA, CHEN WEI-CHIN, CHEN KUAN-LIN, WANG CHUN-CHIEH] TW An electronic package structure including a first package module and a second package module combined with each other is provided. The first package module includes a substrate and members disposed thereon, in which the members are a first electronic element, at least one second electronic element, and an insulating film. The insulating film includes a base material and a foam glue body, and the foam glue body is viscous and compressible. The second package module includes a heat dissipating plate and members disposed thereon, in which the members are a liquid metal and an insulating protrusion. The liquid metal are squeezed by the heat dissipating plate and the base plate. The insulating protrusion covers and leans against the insulating film so as to press and deform the foam glue body via the base material, and the deformed foam glue body covers the second electronic element.

[Chun-Chieh Lin, Lan-Lin Chao, Chia-Hui Lin, Fu-Liang Yang, Chia-Shiung Tsai, Chanming Hu] TW Hsin-Chu A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful for crown capacitors for future DRAM circuits with minimum feature sizes of 0.18 micrometer or less. A conformal conducting layer is deposited over trenches in an interlevel dielectric (ILD) layer, and is polished back to form capacitor bottom electrodes. A novel photoresist mask and etching are then used to pattern the ILD layer to provide a protective interlevel dielectric structure between capacitors. The protective structures prevent damage to the bottom electrodes during subsequent processing. The etching also exposes portions of the outer surface of bottom electrodes for increased capacitance (＞50%). In a first embodiment the ILD structure is formed between pairs of adjacent bottom electrodes, and in a second embodiment the ILD structure is formed between four adjacent bottom electrodes.

[LIN YU CHUN, WANG JIUN JIE, WANG CHUN CHIEH, LIN YI PING, LIN GI GIN] TW

[Kuo-Chang Chiang, Yu-Chuan Shih, Chun-Chieh Lu, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin] TW Hsinchu Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.