in:(MA, Jing Yuan)
DNA ALKYLATING AGENTS
PCT/US2016/021581
[DUAN, Jian-Xin, DUAN, Jian-Xin, CAO, Yeyu, DUAN, Jian-Xin, CAO, Yeyu, CAI, Xiaohong, DUAN, Jian-Xin, CAO, Yeyu, CAI, Xiaohong, JIAO, Hailong, DUAN, Jian-Xin, CAO, Yeyu, CAI, Xiaohong, JIAO, Hailong, MA, Jing Yuan, DUAN, Jian-Xin, CAO, Yeyu, CAI, Xiaohong, JIAO, Hailong, MA, Jing Yuan, MATTEUCCI, Mark]
170 Harbor Way, Suite 300South San Francisco, California 94080
Provided herein are compounds of formula I: wherein the variables are defined herein, processes of making them, and methods of treating cancer comprising administering such compounds.
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FR2212434A
[XING JI, DONG AN, MA JING, MAO YAWEI, YANG HUIMIN, WANG YUXIN, MA YINGBING, HUO XIAODONG, ZHANG DONGHUI, LI WEI, HU YANTAO, GUO LIFENG, MA QINGHUI, ZHANG YAOCHUN, ZHANG XIAOFENG, YAN YU, YUAN XINAN, HU GUANGJIE, QIN YONGQUAN, GAO YU, LIU ZIQI, JING GUOXI, ZHAO JIANMING]
CN;CN;CN
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ELECTROMAGNETIC DETECTION METHOD AND ELECTROMAGNETIC DETECTION SYSTEM FOR WELDING SEAM DEFECT OF STAINLESS STEEL PIPELINE
PCT/CN2022/124246
[XING, Ji 邢继, MA, Jing 马敬, MAO, Yawei 毛亚蔚, YANG, Huimin 杨会敏, WANG, Yuxin 王宇欣, LI, Wei 李伟, DONG, An 董安, ZHANG, Donghui 张东辉, HU, Yantao 胡彦涛, GUO, Lifeng 郭利峰, MA, Qinghui 马庆会, ZHANG, Yaochun 张耀春, YAN, Yu 严宇, HUO, Xiaodong 霍小东, ZHANG, Xiaofeng 张晓峰, YUAN, Xinan 袁新安, QIN, Yongquan 秦永泉, GAO, Yu 高宇, LIU, Ziqi 刘子淇, JING, Guoxi 井国玺, MA, Yingbing 马迎兵, HU, Guangjie 胡广杰, ZHAO, Jianming 赵建明]
No. 117 West Third Ring North Road, Haidian District 中国北京市海淀区西三环北路117号, Beijing 100840Beijing 100840;No. 58 Shunkang Road 中国北京市顺康路58号, Beijing 101300Beijing 101300;No. 66 Changjiangxi Road Huangdao 中国山东省青岛市黄岛区长江西路66号, Shandong 266580Qingdao, Shandong 266580
An electromagnetic detection method for a welding seam defect of a stainless steel pipeline, comprising: acquiring a system noise value a in a gradient signal of a defect-free welding seam area of a reference block, a background noise maximum value b in the gradient signal of the defect-free welding seam area, and a maximum value c of a gradient signal of a defect welding seam position (101); setting an alarm signal value d=the background noise maximum value b*a preset interval, and setting the alarm signal value d<the maximum value c of the gradient signal of the defect welding seam position (102); performing segmented detection on a welding seam to be detected of the stainless steel pipeline, and when the gradient signal is greater than the alarm signal value d, determining that a defect may exist in an area (103); and polishing the area where the defect may exist and then detecting N times, and when gradient signals in N detections are all greater than the alarm signal value d, determining that the defect exists in the area (104). Further provided is an electromagnetic detection system for a welding seam defect of a stainless steel pipeline.
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ARP220103270A
[ZHAO JIANMING, HU GUANGJIE, MA YINGBING, JING GUOXI, LIU ZIQI, GAO YU, QIN YONGQUAN, YUAN XINAN, ZHANG XIAOFENG, HUO XIAODONG, YAN YU, ZHANG YAOCHUN, MA QINGHUI, GUO LIFENG, HU YANTAO, ZHANG DONGHUI, DONG AN, LI WEI, WANG YUXIN, YANG HUIMIN, MAO YAWEI, MA JING, XING JI]
CN;CN;CN
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Chemical mechanical polishing slurry and method of using the same
TW110148259A
[MA JEREMY JIAN, JING JIAN-FEN, ZHOU JAIME JING-YU, YAO YING, ZHOU WEN-TING, LIU TIAN-QI, YANG VIOLA JUN-YA, CAI XIN-YUAN, CHANG BIN, TANG HAO-JIE]
CN
The present invention provides a chemical mechanical polishing slurry for carbon-containing materials CMP and a method of use thereof. The chemical mechanical polishing slurry contains abrasives, oxidizers, carboxylic acid compounds and water. While maintaining a high removal rate of carbon-containing materials, the slurry effectively reduces the polishing by-products on the polishing pad surface, significantly improves the cleanliness of the pad surface, extends the pad lifetime and reduces the defects on the wafer surface after polishing.
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Chemical mechanical polishing slurry and its using method
TW112150806A
[ZHOU JAIME JING-YU, MA JEREMY JIAN, JING JIAN-FEN, YAO YING, YANG VIOLA JUN-YA, CAI XIN-YUAN, SONG KAI, WANG GUO-HAO, QIU HATHAWAY HUAN, WANG ZHENG, YANG ZHENG]
CN
The present invention provides a chemical mechanical polishing (CMP) slurry comprising abrasive particles, corrosion inhibitors, complexing agents, surfactants, oxidizers, and water. The CMP slurry in the present invention can significantly reduce the static etch rate of cobalt without impact the removal rate of cobalt by adding alkynediol non-ionic surfactants.
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BE202206066A
[HE KUAI, MA LINA, JI YUAN, MAO CHENGLI, ZHANG DAWEI, JIANG ZAIXING, JING JING, WU YADONG, GAO GUOLIN, DONG JIDONG, LI BING, LE HAO]
CN;CN
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Chemical mechanical polishing slurry
TW110148264A
[LI RYAN YUN, JING JIAN-FEN, MA JEREMY JIAN, YANG VIOLA JUN-YA, YAO YING, ZHOU JAIME JING-YU, ZHOU WEN-TING, SONG KAI, CAI XIN-YUAN, NI MASON YU-FEI]
CN
The invention provides a chemical mechanical polishing slurry and a method of use thereof. Specifically, the chemical mechanical polishing slurry includes abrasive particle, complexing agent, azole corrosion inhibitor, sulfonic acid surfactant, adenine derivative, and oxidizer. The chemical mechanical polishing slurry of the present invention can be used on Copper CMP with high Copper removal rate, high Copper to Tantalum removal rate selectivity, and can reduce dishing and erosion after CMP.
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Chemical mechanical polishing slurry and a method of use thereof
TW109145995A
[MA JEREMY JIAN, JING JIAN-FEN, YAO YING, ZHOU JAIME JING-YU, YANG VIOLA JUN-YA, HUANG YUE-RUI, CAI XIN-YUAN, LU ROBIN HONG-YI, WANG YU-CHUN]
CN
The present invention discloses a chemical mechanical polishing slurry, comprising composite abrasive particles, an oxidizer and water, wherein the composite abrasive particles are two or more metal oxides selected from ceria, titanium dioxide, manganese dioxide and aluminum oxide which are coated with each other. The chemical mechanical polishing slurry in the present invention has a high removal rate of carbon-containing materials, and can be used for chemical mechanical polishing of carbon-containing materials.
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3D PRINTING MATERIAL AND EQUIPMENT FOR THREE-DIMENSIONAL LASER DEPOSITION MOLDING
ZA202201145A
[JIANG ZAIXING, MAO CHENGLI, LE HAO, HE KUAI, ZHANG DAWEI, DONG JIDONG, GAO GUOLIN, JING JING, MA LINA, LI BING, WU YADONG, LI YANGYANG, XU LIJUAN, JI YUAN, WANG XUFENG, REN LIPING, ZHANG JICHI, LIU YIJIE]
CN;CN;CN;CN
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