[HARAICHI SATOSHI] PURPOSE:To make it possible to process a high-aspect ratio hole in an accurate depth as well as to control a processing depth with high precision by a method wherein trial processing regions having the same structure in a depth direction and the same hysteresis of formations as those of an element region provided. CONSTITUTION:Trial processing regions 2c of a semiconductor device 2a formed on a semiconductor wafer 2 are positioned right under an ion source 3 by moving properly an X-Y table 1. Then, a work for processing the regions 2c, the area of a processed plane being Ao[mum<2>], is started by irradiating an ion beam 4. This area Ao is set sufficiently large for a necessary processing depth and is set in such a way that the aspect ratio of a recessed part at each processing site is small, that is, in such a way that charged particles or an emission spectrum 4a, which are generated from the processing sites, are detected sufficiently well by a detection means 7.

[SHIMASE AKIRA, HARAICHI SATOSHI, YAMAGUCHI HIROSHI, MIYAUCHI TAKEOKI] PURPOSE:To set an ion beam irradiation detector at the most suitable position corresponding to each observation point, by installing movable the detector to detect the secondary electron radiated from a subject observed owing to the ion beam irradiation, at a movable system. CONSTITUTION:An ion beam 1 is radiated over a sample 12, and its secondary electron is detected by a detector 5. In this case, X table 28 is furnished movable in the horizontal direction, and Z table 27 movable in the vertical direction, supported on a side table 13a which is unitary to a table 13. At the top end of the Z table, the detecting portion consisting of the secondary electron intake electrode 18, a scintillator 19, and a light guide 20 is fixed, and connected to a photoelectron amplifying tube 23 which is fixed at a vacuum flange 26 through a light fiber 21, so as to form an ion beam irradiation system. Therefore, the position of the detector 5 can be adjusted constantly at the most suitable point, allowing an accurate sample observation.

[Hongo Mikio(Yokohama,JPX), Mizukoshi Katsuro(Yokohama,JPX), Sano Shuzo(Yokohama,JPX), Kamimura Takashi(Yokohama,JPX), Itoh Fumikazu(Fujisawa,JPX), Shimase Akira(Yokohama,JPX), Haraichi Satoshi(Yokohama,JPX), Takahashi Takahiko(Iruma,JPX)] A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.

[YAMAGUCHI HIROSHI, HARAICHI SATOSHI, SHIMASE AKIRA, MIYAUCHI TAKEOKI] PURPOSE:To improve the heating efficiency while to simplify the structure by irradiating laser beam onto a needle electrode thus thermally fusing the ionized material. CONSTITUTION:The laser beam 8a produced from a laser oscillator 8 is reflected by two adjusting mirrors 9, 10 then collected through collection lens 11 and led through a window glass 12 into a vacuum container 7 thus to form a spot 14 at the tip of an ion discharging needle 2 and to heat it. Since the tip section of ion discharging needle 2 can be directly heated locally, the heating efficiency can be improved. While since the heating source is not arranged in a vacuum container, the structure is simplified.

[Yuuichi Hamamura, Satoshi Haraichi, Akira Shimase, Junzou Azuma, Fumikazu Itoh, Toshio Yamada, Yasuhiro Koizumi, Michinobu Mizumura] JPX Tokyo A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

[Akira Shimase, Hiroshi Yamaguchi, Satoshi Haraichi, Tateoki Miyauchi] JPX Tokyo This invention discloses an ion beam work apparatus which comprises ion mean radiation means for focusing and radiating an ion beam extracted from an ion source to a target put on a moving mechanism, and scanning two-dimensionally the radiation position; secondary particle detection means for detecting the secondary particles generated from the target upon radiation of the ion beam; and superposition-display means for superposing the secondary particle image with a different kind of image containing such information that is not contained in the secondary particle image, and displaying the resulting image; and which can accurately position the beam radiation position to lower wiring layers of the target such as a semiconductor device that can not be observed by the secondary particle image obtained by scanning the focused ion beam.

[HARAICHI SATOSHI, ITO FUMIKAZU, SHIMASE AKIRA, TAKAHASHI TAKAHIKO] PURPOSE:To process the whole pattern in the good shape of an uniform depth by providing a rectangular scanning signal circuit on a focusing iron beam deviation controller and processing the whole pattern composed by plural rectangular patterns in a certain depth at uniform speed. CONSTITUTION:In the case of machining the whole pattern 2 composed of plural rectangular patterns by a focusing ion beam 1, it was machined on each rectangular pattern in the specified width by polarizing with a scanning signal generating circuit 20 for a pattern to be machined of a beam deviation controller 18 in the past. In such a case, a spatter sticking 5, excess machining part 4 and sometimes incomplete machining part are caused to make no good shape in the case of machining the succeeding rectangular pattern. Said defect is not caused to process in a good shape with machining the whole pattern 1 in a certain depth at uniform speed by providing a rectangular scanning signal generating circuit 19 on the beam deviation controller 18.

[YAMAGUCHI HIROSHI, SAITOU HIROYA, SHIMASE AKIRA, HARAICHI SATOSHI, AIUCHI SUSUMU, AKIYAMA NOBUYUKI, KUNIYOSHI SHINJI, KIMURA TAKESHI, KOIZUMI MITSUYOSHI] PURPOSE:To obtain the correcting means of a white spot faulty part of X ray mask with safety, inexpensive and practical, without contaminating by exposing a conductive film by making a hole in the protective film of the white spot faulty part with a focusing ion beam, followed by plating a heavy metal to the exposed conductive film using it as a plating electrode, thereby correcting the white spot faulty part. CONSTITUTION:The protective film 103 of the white spot faulty part is made the hole by the focusing ion beam 102, thereby exposing the conductive film 101. Subsequently, the whole X ray mask is dipped in a plating solution of the heavy metal, and impressed electric voltage 107 between the conductive film 101 of the X ray mask and the electrode 106 of the heavy metal, then the plated film 108 of the heavy metal is formed on the portion exposed conductive film by holding with the ion beam to the protective film, thereby correcting the white spot faulty part. Thus, the method for correcting the white spot faulty part of the X ray mask with safety, inexpensive and practical, is obtd. without contaminating a vacuum vessel, an ion source and an optical system of a ion beam.

[TAKAHASHI TAKAHIKO, HAYAKAWA HAJIME, OKAMOTO YOSHIHIKO, ITO FUMIKAZU, HARAICHI SATOSHI, KOBAYASHI TORU, ANZAI AKIO, YAMAGUCHI HIROSHI, HONGO MIKIO, SHIMASE AKIRA] PURPOSE:To enable the depth to be controlled with high precision even if beam currents fluctuate in processing by a method wherein the beam currents are measured at every specific time lapse to compute the time integral values from which the processed depth can be computed. CONSTITUTION:During the process, beam current iB detected by a blanking aperture 6 is measured by an ampere meter 12 to transmit the signals digitized by an A/D converter 13 to a controller. Simultaneously with the starting process, a trigger 14 is actuated to transmit trigger signals 14\' to the converter 13 at every specific time lapse to transmit the value of the current iB to a switch circuit 15. Besides, the proportional relation between depth Z and dosage D is decided by a decision circuit 16 (21, 25) from the values of input data to control the switch circuit 15. When Z and D are proportional to each other, the sputter volume V is processed through the intermediary of a multiplying circuit 17(22, 23) and an adding circuit 18(24). Furthermore, the existing depth Z is processed by dividing the volume V by an opening space A using a dividing circuit 19. When Z and D are not proportional, the value of current iB is transmitted to another multiplying circuit 23; the dosage D is processed by another adding circuit 24; and the existing depth Z is processed by another deciding circuit 25.

[Hiroshi Yamaguchi, Mikio Hongo, Tateoki Miyauchi, Akira Shimase, Satoshi Haraichi, Takahiko Takahashi, Keiya Saito] JPX Tokyo An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.