[AUDET, Ross M., AUDET, Ross M., ARBORE, Mark Alan, AUDET, Ross M., ARBORE, Mark Alan, BISMUTO, Alfredo, AUDET, Ross M., ARBORE, Mark Alan, BISMUTO, Alfredo, BIDAUX, Yves, AUDET, Ross M., ARBORE, Mark Alan, BISMUTO, Alfredo, BIDAUX, Yves, TARDY, Camille, AUDET, Ross M., ARBORE, Mark Alan, BISMUTO, Alfredo, BIDAUX, Yves, TARDY, Camille, GRESCH, Tobias, AUDET, Ross M., ARBORE, Mark Alan, BISMUTO, Alfredo, BIDAUX, Yves, TARDY, Camille, GRESCH, Tobias, MÜLLER, Antoine Jean André] {1 Infinite LoopCupertino, CA 95014;US(US)(US)} Disclosed is a Vernier effect DBR laser that has uniform laser injection current pumping along the length of the laser. The laser can include one or more tuning elements, separate from the laser injection element, and these tuning elements can be used to control the temperature or modal refractive index of one or more sections of the laser. The refractive indices of each diffraction grating can be directly controlled by temperature changes, electro optic effects, or other means through the one or more tuning elements. With direct control of the temperature and/or refractive indices of the diffraction gratings, the uniformly pumped Vernier effect DBR laser can be capable of a wider tuning range. Additionally, uniform pumping of the laser through a single electrode can reduce or eliminate interfacial reflections caused by, for example, gaps between metal contacts atop the laser ridge, which can minimize multi-mode operation and mode hopping. Disclosed is a Vernier effect DBR laser that has uniform laser injection current pumping along the length of the laser. The laser can include one or more tuning elements, separate from the laser injection element, and these tuning elements can be used to control the temperature or modal refractive index of one or more sections of the laser. The refractive indices of each diffraction grating can be directly controlled by temperature changes, electro optic effects, or other means through the one or more tuning elements. With direct control of the temperature and/or refractive indices of the diffraction gratings, the uniformly pumped Vernier effect DBR laser can be capable of a wider tuning range. Additionally, uniform pumping of the laser through a single electrode can reduce or eliminate interfacial reflections caused by, for example, gaps between metal contacts atop the laser ridge, which can minimize multi-mode operation and mode hopping.

[MAULINI, Richard, MAULINI, Richard, BISMUTO, Alfredo, MAULINI, Richard, BISMUTO, Alfredo, GRESCH, Tobias, MAULINI, Richard, BISMUTO, Alfredo, GRESCH, Tobias, MÜLLER, Antoine] {1-3 Passage Maximilien-de-MeuronCH-2000 Neuchatel;CH(CH)(CH)} For epitaxial-side-down bonding of quantum cascade lasers (QCLs), it is important to optimize the heat transfer between the QCL chip and the heat sink to which the chip is mounted. This is achieved by using a heatsink with high thermal conductivity and by minimizing the thermal resistance between the laser active region and said heatsink. In the epi-down configuration concerned, the active region of the QCL is located only a few micrometers away from the heatsink, which is preferable from a thermal standpoint. However, this design is challenging to implement and often results in a low fabrication yield if no special precautions are taken. Since the active region is very close to the heatsink, solder material may ooze out on the sides of the chip during the bonding process and may short-circuits the device, rendering it unusable. To avoid this happening, the invention proposes to provide a trench all around the chip with the exception of the two waveguide facets, i.e. the ends of the active region. This trench may be etched into the otherwise standard QCL chip or otherwise machined into the chip, providing an initially empty space for the volume of solder displaced by the chip during the epi-down bonding process, which empty space is occupied by the surplus solder without contacting the side of the chip and thus short-circuiting the device.

[Richard Maulini, Alfred Bismuto, Tobias Gresch, Antoine Müller] CH CH,St-Blaise For epitaxial-side-down bonding of quantum cascade lasers (QCLs), it is important to optimize the heat transfer between the QCL chip and the heat sink to which the chip is mounted. This is achieved by using a heatsink with high thermal conductivity and by minimizing the thermal resistance between the laser active region and said heatsink. In the epi-down configuration concerned, the active region of the QCL is located only a few micrometers away from the heatsink, which is preferable from a thermal standpoint. However, this design is challenging to implement and often results in a low fabrication yield if no special precautions are taken. Since the active region is very close to the heatsink, solder material may ooze out on the sides of the chip during the bonding process and may short-circuits the device, rendering it unusable. To avoid this happening, the invention proposes to provide a trench all around the chip with the exception of the two waveguide facets, i.e. the ends of the active region. This trench may be etched into the otherwise standard QCL chip or otherwise machined into the chip, providing an initially empty space for the volume of solder displaced by the chip during the epi-down bonding process, which empty space is occupied by the surplus solder without contacting the side of the chip and thus short-circuiting the device.

[CARY S HUBNER, CHRISTIAN WAIBEL, PHILIPP BENZ, ROBERT LAGA, TOBIAS MEILWES, VALENTIN STEFAN GRESCH] US

[GRESCH, Valentin, HUBNER, Cary, WAIBEL, Christian, BENZ, Philipp, MEILWES, Tobias] US,Moline, IL 61265,One John Deere Place; An agricultural planter (100) row unit (106) has a gauge wheel (116A, 116B, 116) supported by a gauge wheel arm (138, 148A, 148B, 148), to control planting depth. An actuator (126, 190) drives movement of a mechanical stop (150, 176) that bears against a gauge wheel (116A, 116B, 116) support arm (222) to position the gauge wheel (116A, 116B, 116) support arm (222) to obtain a desired planting depth. A seed depth control system (260) receives an operator input (318, 436), from an operator (270) compartment of a towing vehicle, and automatically controls actuation of the seed depth actuator (126, 190).

[MAULINI RICHARD, BISMUTO ALFREDO, GRESCH TOBIAS, MULLER ANTOINE] CH To optimize the heat transfer between the chip and the heatsink for epitaxial-side-down bonding of quantum cascade lasers (QCLs), a heatsink with high thermal conductivity is used and the thermal resistance between the laser active region and said heatsink minimized. Since the active region is very close to the heatsink, which is preferable from a thermal standpoint, solder material may ooze out on the sides of the chip during the bonding process and may short-circuit the device, rendering it unusable. To avoid this, the invention provides a trench all around the chip with the exception of the two waveguide facets. This trench is etched into the otherwise standard QCL chip, providing an initially empty, isolated space for the solder displaced by the chip during the epi-down bonding process.

[Valentin Stefan Gresch, Cary S. Hubner, Christian Waibel, Philipp Benz, Tobias Meilwes] US US,IL,Moline An agricultural planter row unit has a gauge wheel supported by a gauge wheel arm, to control planting depth. An actuator drives movement of a mechanical stop that bears against a gauge wheel support arm to position the gauge wheel support arm to obtain a desired planting depth. A seed depth control system receives an operator input, from an operator compartment of a towing vehicle, and automatically controls actuation of the seed depth actuator.

[GRESCH, Valentin Stefan, HUBNER, Cary S., WAIBEL, Christian, BENZ, Philipp, MEILWES, Tobias, LAGA, Robert] US,Moline, IL 61265,One John Deere Place;

[MAULINI, Richard, BISMUTO, Alfredo, GRESCH, Tobias, MÜLLER, Antoine] CH,2072 St-Blaise,Avenue des Pâquiers 1;

[LAGA ROBERT, BENZ PHILIPP, WAIBEL CHRISTIAN, MEILWES TOBIAS, HUBNER CARY S, GRESCH VALENTIN STEFAN] US