[Chang Ting-Chang(No. 1001-1, Ta-Hsueh Road,Hsinchu), Liu Po-Tsun(6Fl., No. 11, Alley 71, Lane 376, Kuang-Fu Rd. Sec. 1,Hsinchu)] A method for fabricating a noble metal electrode of a capacitor. A substrate having a doped region is provided. A dielectric layer is formed to cover the substrate including the doped region with a contact is penetrating through the dielectric layer to couple with the doped region. A barrier layer is formed to cover the dielectric layer and the contact. A polysilicon layer is formed on the barrier layer. The polysilicon layer and TiN barrier layer are etched to form an electrode pattern. The chip is immersed in a solution having noble metal ions and reducing agent for the noble metal ions. In such solution, a displacement reaction takes place to displace the polysilicon layer by a noble metal layer. After the immersion step, the chip is annealed to densify the noble metal layer.