[Yasuo Kitaoka, Kiminori Mizuuchi, Kazuhisa Yamamoto, Shinichi Takigawa] JP Osaka The emission angle and emission position of coherent light source are controlled with high precision. A wavelength-variable DBR semiconductor laser (1) and an optical waveguide-type QPM-SHG device (2) are mounted on a submount (7), and the submount (7) is fixed inside a package (11), thus obtaining a coherent light source. Reference lines (A) and (B) serving as reference markers when fixing the submount (7) are formed on a submount fixing face of the package (11).

[TAKEUCHI, Takayuki, KAWASHIMA, Takahiro, SAITOH, Tohru, OKUZAWA, Tomohiro, KITAOKA, Yasuo] 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501;;;;; A field effect transistor is provided with a semiconductor layer (14); a source electrode (15) and a drain electrode (16) which are electrically connected with the semiconductor layer (14); and a gate electrode (12) for applying electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) includes a plurality of fine wires, which are composed of inorganic semiconductor, and an organic semiconductor material.

[SUZUKI, Yasuo, NOYORI, Yoshinari, KITAOKA, Mikio, NAWA, Tatsuhiko] 36-11, Shinbashi 5-chome Minato-ku, Tokyo 105-0004;FDK Corporation 36-11, Shinbashi 5-chome Minato-ku, Tokyo 105-0004;FDK Corporation 36-11, Shinbashi 5-chome Minato-ku, Tokyo 105-0004;FDK Corporation 36-11, Shinbashi 5-chome Minato-ku, Tokyo 105-0004;FDK Corporation 36-11, Shinbashi 5-chome Minato-ku, Tokyo 105-0004 A multilayer inductor (1) for high frequency use and adapted to microminiaturization is provided. Electrically insulating layers and conductive patterns are alternately stacked. The edges of the conductive patterns are connected in series to form a coil (3) formed in the stack direction. Both ends of the coil (3) are connected to terminal electrodes (4, 5) on both ends of the chip, respectively. The terminal electrodes (4, 5) are formed on an end face of the chip where the coil (3) is connected and on the lower face, or on the end face of the chip and on the lower and upper faces of the chip. With this electrode structure, it is possible to reduce the portions where the coil (3) are near the terminal electrodes (4, 5) to a minimum and thereby to reduce the stray capacitance. Therefore, it is possible to raise the resonance frequency and to provide a higher frequency inductor.

[YOKOI, Tatsuhisa, MATSUNO, Shigehiro, HARADA, Yasuo, KUSUNOKI, Ryouhei, HORIKAWA, Hidetomo, KITAOKA, Ryoichi] c/o Winter, Brandl, Fürniss, Hübner, Röss Kaiser, Polte-Partnership Patent & Law Firm Alois-Steinecker-Str.22 D-85354 Freising-munich;c/o TOYOTA JIDOSHA KABUSHIKI KAISHA 1, Toyota-cho Toyota-shi, Aichi-ken 471-8571;c/o TOYOTA JIDOSHA KABUSHIKI KAISHA 1, Toyota-cho Toyota-shi, Aichi-ken 471-8571;c/o TOYOTA JIDOSHA KABUSHIKI KAISHA 1, Toyota-cho Toyota-shi, Aichi-ken 471-8571;c/o DAIHATSU MOTOR CO., LTD. 1-1, Daihatsucho, Ikeda-shi.Osaka 563-8651;c/o DAIHATSU MOTOR CO., LTD. 1-1, Daihatsucho, Ikeda-shi.Osaka 563-8651;c/o DAIHATSU MOTOR CO., LTD. 1-1, Daihatsucho, Ikeda-shi.Osaka 563-8651 A diesel engine includes: a PM filter (31) provided in its exhaust passage (3); a fuel injection valve (43) for performing post fuel injection in a cylinder of an engine body (1) in addition to primary fuel injection, in order to supply fuel to the PM filter (31), to maintain its purification performance; an oil level sensor (61) for detecting a degree of dilution of engine oil; and a first indicator lamp (71) that is turned on to indicate that the engine oil needs to be changed when the degree of dilution of engine oil detected by the oil level sensor (61) is equal to or greater than an allowable level. The vehicle diesel engine overrides the prohibition of the post fuel injection until a distance traveled by the vehicle after the indicator lamp (71) is turned on reaches a predetermined distance.

[Osamu Yamada, Hisashi Minemoto, Kouichi Hiranaka, Takeshi Hatakeyama, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka] JP Ehime A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

[KITAOKA YASUO] A manufacturing method is provided for manufacturing a semiconductor element having a semiconductor layer including a crystal of an organic semiconductor material. The manufacturing method includes (i) a step of forming a frame (12) on a substrate (base material) (11), and (ii) a step of forming a semiconductor layer (crystal (13)) inside of the frame (12). The step (ii) includes a crystal forming step wherein a solution (21) (liquid) containing the organic semiconductor material and a liquid medium is arranged inside of the frame (12) and a crystal (13) is formed from the solution (21).

[MORI, Yusuke, MINEMOTO, Hisashi, KITAOKA, Yasuo, KIDOGUCHI, Isao, KAWAMURA, Fumio, SASAKI, Takatomo, UMEDA, Hidekazu, TAKAHASHI, Yasuhito] 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501;;;;;;;; An apparatus for production of a crystal of Group III element nitride and process for producing a crystal of Group III element nitride, by which a crystal of high quality can be produced. The crystal growth by means of this apparatus can be performed in, for example, the following manner. Raw material for crystal (131) and nitrogenous gas are introduced in reaction vessel (120) and heated by means of heater (110), and a crystal is grown in pressurized atmosphere. The above gas is delivered from gas supply unit (180) through a gas inlet of the reaction vessel into the reaction vessel (120), and discharged from a gas outlet of the reaction vessel into the interior of pressure tight vessel (102). As the above gas is directly, without passing through the pressure tight vessel (102), introduced into the reaction vessel (120), the mingling of impurities adhering to the pressure tight vessel (102), etc. into a field of crystal growth can be avoided. Further, as the above gas flows through the interior of the reaction vessel (120), there can be avoided, for example, condensation of vaporized alkali metal, etc. at the gas inlet, etc. and inflow thereof into the gas supply unit (180), etc. As a result, the quality of crystal of Group III element nitride obtained can be enhanced.

[MORIKAWA, Akihiro, KITAOKA, Yasuo, YAMAMOTO, Kazuhisa, TAKIGAWA, Shinichi] 1006, Oaza Kadoma Kadoma-shi, Osaka 571-8501;1-4-40, Nonakaminami Yodogawa-ku Osaka-shi, Osaka 532-0022;3-5-B-604, Higashiota Ibaraki-shi, Osaka 567-0012;3-30-4, Kamihamuro Takatsuki-shi, Osaka 569-1044;2-9-21, Sawaragihama Ibaraki-shi, Osaka 567-0864 A shorter wavelength laser module capable of solving such a problem that unnecessary gas is adhered to the end face of a light guided path and thus a long-term reliability is lost, wherein a structure is formed in a package so that a package cover (201) used to seal airtight the shorter wavelength laser module does not come into contact with internal gas, and a process to promote the polymerization of a fixative used in the package is introduced, whereby the unnecessary gas (204) of the fixative can be removed, and the long-term reliability of an output can be assured.

[Yasuo KITAOKA, Kazuhisa Yamamoto, Hiromu Kitaura, Ken ichi Kasazumi] JP Osaka An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controller 12 controls a spatial light modulator in accordance with an image signal to display the image, and also modulates an intensity of a visible light output from a backlight 13 with a frequency higher than the frame rate of the image signal to have the visible light output from the backlight 13 carry additional information. A light receiver 15 receives the visible light and demodulates to extract the additional information. An additional information generator 16 outputs the additional information.

[Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato] JP Osaka After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.